Improved Properties of Silicon Dioxide Layers Grown Under Bias

1 January 1966

journal article
Published by The Electrochemical Society in Journal of the Electrochemical Society

Vol. 113 (2) , 138-141
https://doi.org/10.1149/1.2423887

Abstract

Oxidation of silicon was carried out under the influence of an electric field which was applied by means of an electrode suspended close to the surface. Negative electrode potential resulted in a voltage dependent reduction of surface donor density during steam oxidation. Above several hundred volts surface donor density saturates at about states per cm². The results tend to suport the impurity ion model for channel and drift effects. No influence of field on dry oxidation was found. MOS‐drift experiments gave indications of greatly improved stability of bias grown wet oxides.

Keywords

OXIDATION
MODEL
SILICON
DRIFT
BIAS
GROWN
SURFACE DONOR DENSITY

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