A Water-Amine-Complexing Agent System for Etching Silicon
- 1 January 1967
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 114 (9) , 965-970
- https://doi.org/10.1149/1.2426793
Abstract
Ternary mixtures of water, amine, and complexing agent have been found to etch silicon. The silicon etch rate has been investigated.as a function of variations in both solution and material parameters. A parallel investigation has been concerned with the etching characteristics of silicon samples coated with silicon dioxide films. Applications of this etching system to semiconductor device technology has provided a tool for the chemical shaping of silicon as well as the evaluation of protective surface films on silicon substrates.Keywords
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