A very high efficiency silicon bipolar transistor
- 13 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- 12 ps implanted base silicon bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHzIEEE Journal of Solid-State Circuits, 1999
- Class-F power amplifiers with maximally flat waveformsIEEE Transactions on Microwave Theory and Techniques, 1997