A transimpedance amplifier for OC-768 applications designed using a SiGe HBT BiCMOS technology

1 January 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 276-277
https://doi.org/10.1109/ofc.2002.1036358

Abstract

TIA's were designed with transimpedance gains of 230 /spl Omega/ and 240 /spl Omega/, with corresponding bandwidths of 30 GHz and 29 GHz, respectively. Because the simulated results in the 50 /spl Omega/ test environment match reasonably well with the measured results, it is expected that the TIA performance, when packaged with an appropriate photodiode, will improve, as the simulated results for a TIA with a photodiode indicate.

Keywords

This publication has 2 references indexed in Scilit:

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Integrated high frequency low-noise current-mode optical transimpedance preamplifiers: theory and practice
IEEE Journal of Solid-State Circuits, 1995