All-optical modulation using an n-doped quantum-well structure
- 15 December 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (12) , 6529-6531
- https://doi.org/10.1063/1.346830
Abstract
The modulation of interband-resonant light by intersubband-resonant light using an n-doped quantum well is proposed, and results of the theoretical analysis are reported. It is shown that a large change in absorption coefficient from 100 to 3160 cm−1 for interband-resonant light can be obtained by changing the intensity of intersubband-resonant light from 0 to 1 MW/cm2. Very fast modulation speed (∼ps) can be expected.This publication has 3 references indexed in Scilit:
- Bound-free intraband absorption in GaAs-AlxGa1−xAs semiconductor quantum wellsApplied Physics Letters, 1989
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985