8–13 μm InAsSb heterojunction photodiode operating at near room temperature
- 30 October 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (18) , 2645-2647
- https://doi.org/10.1063/1.114323
Abstract
P +-InSb/π-InAs1−xSbx/n+-InSb heterojunction photodiodes operating at near room temperature in the 8–13 μm region of infrared (IR) spectrum are reported. A room-temperature photovoltaic response of up to 13 μm has been observed at 300 K with an x≊0.85 sample. The voltage responsivity-area product of 3×10−5 V cm2/W has been obtained at 300 K for the λ=10.6 μm optimized device. This was close to the theoretical limit set by the Auger mechanism, with a detectivity at room temperature of ≊1.5×108 cm Hz1/2/W.Keywords
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