Diffusion from SiO2:Zn Spin-on Films into n-In0.53Ga0.47As
- 1 July 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (7A) , L589-591
- https://doi.org/10.1143/jjap.25.l589
Abstract
Zn-diffusion from SiO2:Zn spin-on films into n-InGaAs for the preparation of p-n junctions has been investigated. The measured p-n junction depths versus diffusion time are in accordance with a diffusion model which considers the spin-on film as an exhaustable diffusion Zn-source. Depending upon the composition of the SiO2:Zn-films diffusion depths proportional to the square-root of diffusion time t or depths nearly independent of t were observed.Keywords
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