Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process

This publication has 2 references indexed in Scilit:

• Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• A fully planarized 6-level-metal CMOS technology for 0.25-0.18 micron foundry manufacturing
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002