Recombination processes and optical bias in undoped a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 623-626
- https://doi.org/10.1016/0022-3093(85)90735-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Transient quenching of CW luminescence in a-Si:HSolid State Communications, 1985
- Calculation of the extended-state electron mobility in hydrogenated amorphous siliconSolid State Communications, 1985
- The long-time drift mobility in aSi:H: Optical bias and temperature dependenceJournal of Non-Crystalline Solids, 1984
- Disorder effects on deep trapping in amorphous semiconductorsPhilosophical Magazine Part B, 1984