Thickness increment of buried oxide in a SIMOX wafer by high-temperature oxidation

17 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 71-72
https://doi.org/10.1109/soi.1994.514251

Abstract

Summary form only given. High-quality silicon oxide obtained by thermal oxidation is widely used as the gate insulator of MOSFETs. However, the electrical characteristics of the buried oxide (BOX) formed by oxygen implantation have been reported to be slightly inferior to those of thermal oxide. This paper shows that high-temperature oxidation produces internal thermal oxide (ITOX) on BOX. As a result, the total thickness of the formed buried oxide effectively increases. The buried oxide having an ITOX/BOX structure can improve its characteristics. This oxidation also reduces the microroughness of the interface between the top Si and the buried oxide.

Keywords

OXIDATION
TEMPERATURE
ATOMIC FORCE MICROSCOPY
MORPHOLOGY
SILICON ON INSULATOR TECHNOLOGY
LARGE SCALE INTEGRATION
LABORATORIES
INSULATION
MOSFETS
ELECTRIC VARIABLES

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