Observation of a correlation between twin orientation and substrate step direction in thin GaAs films grown on intentionally misoriented Si (100)
- 19 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1160-1162
- https://doi.org/10.1063/1.102549
Abstract
A transmission electron microscope study of GaAs grown on Si tilted 4° off (100) has for the first time revealed that of the two twin variants propagating to the GaAs film surface, a substrate tilt about a 〈011〉-type direction favors one over the other.This publication has 3 references indexed in Scilit:
- Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100)Published by SPIE-Intl Soc Optical Eng ,1988
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Study of heteroepitaxial interfaces by atomic resolution electron microscopyJournal of Vacuum Science & Technology B, 1986