Influence of Mobile Ions on Nanotube Based FET Devices
- 4 April 2003
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 3 (5) , 639-641
- https://doi.org/10.1021/nl025941j
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect TransistorsNano Letters, 2003
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect TransistorsNano Letters, 2002
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002
- Nonvolatile Memory and Programmable Logic from Molecule-Gated NanowiresNano Letters, 2002
- Logic Circuits with Carbon Nanotube TransistorsScience, 2001
- Reversible water-solubilization of single-walled carbon nanotubes by polymer wrappingChemical Physics Letters, 2001
- What Can Be Seen by Static and Dynamic Light Scattering in Polyelectrolyte Solutions and Mixtures?Langmuir, 1999
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998
- A survey of Hammett substituent constants and resonance and field parametersChemical Reviews, 1991