Dislocation patterning and nanostructure engineering in compositionally graded layer systems
- 22 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 132-136
- https://doi.org/10.1016/0022-0248(95)00381-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Growth ripples upon strained SiGe epitaxial layers on Si and misfit dislocation interactionsJournal of Vacuum Science & Technology A, 1994
- On the nature of cross-hatch patterns on compositionally graded Si1−xGex alloy layersApplied Physics Letters, 1994
- Self-adjustment of misfit dislocations in compositionally graded Si1−xGexlayersPhilosophical Magazine Letters, 1993
- Surface morphology of related GexSi1−x filmsApplied Physics Letters, 1992
- Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in SiJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Mechanism and conditions for anomalous strain relaxation in graded thin films and superlatticesJournal of Applied Physics, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Structure Formation by Dissipative Processes in Crystals with High Defect DensitiesSolid State Phenomena, 1991