Thermomechanical Properties of Chemically Vapor Deposited Silicon Carbide Filaments
- 1 October 1989
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 72 (10) , 1993-1996
- https://doi.org/10.1111/j.1151-2916.1989.tb06017.x
Abstract
The thermal expansion of filaments of CVD SiC was measured parallel and perpendicular to the filament axis. A discontinuity in the expansion versus temperature curve near the melting point of Si indicated the presence of free Si. The magnitude of the discontinuity was used to estimate the amount of the Si in the fibers. The presence of free Si is discussed in relation to the design and maximum‐use temperature of SiC‐filament‐reinforced ceramic composites.Keywords
This publication has 3 references indexed in Scilit:
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- Creep of chemically vapour deposited SiC fibresJournal of Materials Science, 1986
- Silicon carbide filaments: MicrostructureJournal of Materials Science, 1985