Investigation of the inversion layer electron mobility in α-SiC
- 3 February 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (5) , 625-627
- https://doi.org/10.1063/1.118292
Abstract
The inversion layer mobility of 6H- or 4H-SiC is one of the very important parameters for metal oxide semiconductor field effect transistor applications. In this contribution, we have calculated the theoretical value of the inversion layer mobility of α-SiC at the low-temperature limit. The calculations include the Coulomb scattering by the ionized acceptors and by the surface charges, the roughness scattering at the interface between SiO2 and semiconductor, and the screening effect by free electrons. The results show that the mobility calculated for SiC is higher than that of silicon (001) surface. We conclude that the higher mobility than silicon (001) surface is mainly due to the larger number of conduction band minima in SiC than in silicon in this calculation. In addition, the simple model for the phonon scattering predicts the higher mobility in SiC than in silicon.Keywords
This publication has 16 references indexed in Scilit:
- A high-current and high-temperature 6H-SiC thyristorIEEE Electron Device Letters, 1996
- Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbideIEEE Electron Device Letters, 1996
- Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide StructureJapanese Journal of Applied Physics, 1995
- The guard-ring termination for the high-voltage SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- Characterization of annealed oxides on n-type 6HSiC by high- and low-frequency CV-measurementsMicroelectronic Engineering, 1995
- Progress in silicon carbide semiconductor electronics technologyJournal of Electronic Materials, 1995
- Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interfaceJournal of Electronic Materials, 1995
- Experimental evidence for the existence of a mobility edge in silicon carbide inversion layersPhilosophical Magazine Part B, 1995
- High temperature silicon carbide MOSFETs with verylow drain leakage currentElectronics Letters, 1994
- 6H-silicon carbide devices and applicationsPhysica B: Condensed Matter, 1993