Thermoelectric Properties of FeSi2-Base Semiconductors with Ag Addition

• 1 January 1994
• journal article
• Published by Japan Institute of Metals in Journal of the Japan Institute of Metals and Materials
• Vol. 58  (3) , 353-358
• https://doi.org/10.2320/jinstmet1952.58.3_353

Abstract

Keywords

• IRON SILICIDE
• THERMOELECTRIC SEMICONDUCTOR
• THERMOELECTROMOTIVE FORCE
• SEEBECK COEFFICIENT
• ELECTRICAL RESISTIVITY
• MELT-SPUN
• SINTERING