Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices

This publication has 54 references indexed in Scilit:

• Capacitance and conductance deep level transient spectroscopy in field-effect transistors
  Applied Physics Letters, 1986
• Identification of deep-gap states ina-Si:H by photo- depopulation-induced electron-spin resonance
  Physical Review B, 1985
• Characteristic electronic defects at the Si-SiO2 interface
  Applied Physics Letters, 1983
• Oxygen-related donor states in silicon
  Applied Physics Letters, 1981
• Bulk traps in silicon-on-sapphire by conductance DLTS
  IEEE Transactions on Electron Devices, 1981
• Deep Level Impurities in Semiconductors
  Annual Review of Materials Science, 1977
• An experimental method to analyse trapping centres in silicon at very low concentrations
  Solid-State Electronics, 1975
• Photocapacitance Studies of the Oxygen Donor in GaP. II. Capture Cross Sections
  Physical Review B, 1973
• Physics of Semiconductor Devices
  Physics Today, 1970
• Semiconductor Statistics
  Published by Elsevier ,1962