Current saturation and drain conductance of junction-gate field-effect transistors

This publication has 4 references indexed in Scilit:

• Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
  Solid-State Electronics, 1966
• The equivalent circuit of an arbitrarily doped field-effect transistor
  Solid-State Electronics, 1965
• Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)
  IEEE Transactions on Electron Devices, 1965
• Physical phenomenon responsible for saturation current in field effect devices
  Solid-State Electronics, 1963