Linearised differential transconductors insubthreshold CMOS
- 30 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (7) , 545-547
- https://doi.org/10.1049/el:19950376
Abstract
Three schemes for linearising the transconductance of the basic differential pair in subthreshold CMOS are examined: (i) multiple asymmetric differential pairs, (ii) source degeneration via symmetric diffusors, and (iii) source degeneration via a single diffusor. Using a maximally flat optimising criterion, the linear range of the basic differential pair can be increased by 4–8 times.Keywords
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