Band gap reduction in CdS due to high density of photo-injected carriers
- 15 March 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (6) , 517-520
- https://doi.org/10.1016/0038-1098(72)90057-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate n-Type GaAsJournal of Applied Physics, 1970
- Effect of Electron-Exciton Collisions on the Free-Exciton Linewidth in Epitaxial GaAsPhysical Review Letters, 1969
- Radiative Recombination from Photoexcited Hot Carriers in GaAsPhysical Review Letters, 1969