Optically-biased, edge-coupled InP/InGaAs heterojunction phototransistors

9 December 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (25) , 2217-2219
https://doi.org/10.1049/el:19931489

Abstract

InP/GaAs heterojunction phototransistors are reported with high DC gain (greater than 270) and high unity-gain frequency (greater than 30GHz). To the authors' knowledge, these are the highest performance heterojunction phototransistors reported to date. This performance is achieved by a combination of edge-coupled optical access and a two-terminal, optically-biased design. This design allows efficient, small area devices with low parasitics to be produced with a simple fabrication scheme.

Keywords

EDGE-COUPLED OPTICAL ACCESS
SMALL AREA DEVICES
INP/INGAAS
FABRICATION SCHEME
INP-INGAAS
TWO-TERMINAL
HETEROJUNCTION PHOTOTRANSISTORS
OPTICALLY-BIASED DESIGN
HIGH UNITY-GAIN FREQUENCY
HIGH DC GAIN
LOW PARASITICS
30 GHZ