Absorption edge measurements in chemically deposited pyrite FeS2 thin layers
- 15 March 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (6) , 2339-2341
- https://doi.org/10.1063/1.337946
Abstract
Thin layers of pyrite FeS2 are prepared by chemical deposition using the spray pyrolysis technique. Optical absorption data for photon energies between 1 and 3.8 eV are analyzed and interpreted in terms of electronic transitions and assisting phonons. A direct forbidden band gap of 1.95 ±0.004 eV, an indirect band gap of 1.12±0.003 eV, and assisting phonons of 0.065 eV are detected.This publication has 10 references indexed in Scilit:
- Interband transitions of chemically deposited pyrite FeS2 films in the fundamental absorption region between 1 and 3.8 eVPhysica Status Solidi (a), 1986
- Optical band gap of Cd3P2-Zn3P2semiconductor solid solutionsJournal of Physics C: Solid State Physics, 1985
- Investigation of optically allowed transitions of α-sulfur thin filmsJournal of Applied Physics, 1985
- Indirect Electronic Transitions in Single Crystals of Triglycine SulfatePhysica Status Solidi (a), 1985
- Reflectivity Spectra and Optical Constants of Pyrites (FeS2, CoS2 and NiS2) between 0.2 and 4.4 eVJournal of the Physics Society Japan, 1984
- Electrical and optical properties of chemically deposited conducting glass for SIS solar cellsSolid State Communications, 1983
- Vacuum Ultraviolet Reflectance Spectra and Band Structures of Pyrites (FeS2, CoS2 and NiS2) and NiO Measured with Synchrotron RadiationJournal of the Physics Society Japan, 1983
- Optical absorption in iron pyrite (Fe)Physical Review B, 1978
- Optical properties, phonons and electronic structure of iron pyrite (FeS2)Journal of Physics C: Solid State Physics, 1976
- Transition metal pyrite dichalcogenides. High-pressure synthesis and correlation of propertiesInorganic Chemistry, 1968