X-Band MMIC amplifier on GaAs/Si

1 August 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (8) , 350-352
https://doi.org/10.1109/edl.1987.26656

Abstract

A single-stage MMIC feedback amplifier fabricated on GaAs epitaxially grown on high-resistivity Si (6 × 10 ³ Ω.cm) will be described. The GaAs active and buffer layers were grown on 4°-off-

Keywords

MMICS
GALLIUM ARSENIDE
THERMAL CONDUCTIVITY
FEEDBACK AMPLIFIERS
THERMAL RESISTANCE
DIELECTRIC SUBSTRATES
CHARGE CARRIER DENSITY
FREQUENCY
THERMAL FACTORS
DISTRIBUTED PARAMETER CIRCUITS