Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
In this letter, we report the fabrication of high quality GaN–Al0.1Ga0.9N heterostructures using trimethylamine‐alane as the aluminum source. The two‐dimensional electron gas (2DEG) with mobility values as high as 5000 cm2/V s at 150 K is demonstrated. We also present the results of our calculations of the 2DEG mobility at the GaN–Al0.1Ga0.9N heterointerface. Our calculations show that the mobility enhancement in the 2DEG is related to a much larger volume carrier concentration (compared to bulk GaN) and, therefore, to a larger Fermi energy and to a more effective screening of impurity and piezoelectric scattering.