Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S) , 1579
- https://doi.org/10.1143/jjap.35.1579
Abstract
Low dielectric constant fluorinated oxide (SiOF) films were deposited using SiF4/SiH4/O2 mixtures by remote plasma chemical vapor deposition (RPCVD). The refractive index and relative dielectric constant decrease with increasing SiF4/SiH4 ratio. The fluorine content in the SiOF film observed by X-ray photoelectron spectroscopy increases with SiF4/SiH4 ratio. With increase of fluorine content in the SiOF film, the peak position of the Si-O stretching mode shifts to a higher wave number and the relative dielectric constant decreases. The SiOF film, deposited with SiF4/SiH4 mixture ([SiF4]/[SiH4]=40), exhibited an F content of 12 at.% and a relative dielectric constant of 3.38.Keywords
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