Simple multiwavelength device fabrication technique using a single-grating holographic exposure
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (7) , 867-869
- https://doi.org/10.1109/68.502253
Abstract
A simple technique, using a single-grating holographic exposure associated with localized selective etching steps, has been developed for multiwavelength device fabrication. Four-wavelength DBR laser arrays with a 5 nm Bragg wavelength spacing have been fabricated for wavelength division multiplexing (WDM) applications with this method. These devices exhibit uniformly low-threshold currents (10-15 mA), high-output powers (15 mW) and wide tunabilities (12 nm), leading to an overall accessible wavelength domain of 28 nm for the array.Keywords
This publication has 6 references indexed in Scilit:
- Butt-jointed DBR laser with 15 nm tunabilitygrown in three MOVPE stepsElectronics Letters, 1995
- Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994
- DBR laser array for WDM systemElectronics Letters, 1993
- A 16*1 wavelength division multiplexer with integrated distributed Bragg reflector lasers and electroabsorption modulatorsIEEE Photonics Technology Letters, 1993
- 8-wavelength DBR laser array fabricated with a single-step Bragg grating printing techniqueIEEE Photonics Technology Letters, 1993
- Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiersElectronics Letters, 1992