On the physics and modeling of small semiconductor devices—II
- 1 June 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (6) , 531-544
- https://doi.org/10.1016/0038-1101(80)90034-9
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Hot electron quantum magneto-transportSolid-State Electronics, 1978
- Hot-electron relaxation effects in devicesSolid-State Electronics, 1978
- EpilogueSolid-State Electronics, 1978
- High-field electronic conduction in insulatorsSolid-State Electronics, 1978
- Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped SiliconJournal of the Electrochemical Society, 1971
- Nonequilibrium statistical operator in hot-electron theory IPhysica, 1970
- A scanning microscope with 5 Å resolutionJournal of Molecular Biology, 1970
- Derivation of the nonequilibrium statistical operator from the extremum of the information entropyPhysica, 1970
- The influence of interelectronic collisions on conduction and breakdown in polar crystalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1958
- The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957