Research Leading to Point-Contact Transistor
- 19 July 1957
- journal article
- research article
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 126 (3264) , 105-112
- https://doi.org/10.1126/science.126.3264.105
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Conductivity in semiconductorsElectrical Engineering, 1949
- Physical Principles Involved in Transistor ActionPhysical Review B, 1949
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949
- The Double-Surface TransistorPhysical Review B, 1949
- The Transistor, A Semi-Conductor TriodePhysical Review B, 1948
- Modulation of Conductance of Thin Films of Semi-Conductors by Surface ChargesPhysical Review B, 1948
- Nature of the Forward Current in Germanium Point ContactsPhysical Review B, 1948
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939