Surface-emitting GaAlAs/GaAs laser with etched mirrors

10 April 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (8) , 438-439
https://doi.org/10.1049/el:19860299

Abstract

A surface-emitting GaAlAs/GaAs laser is fabricated using ion milling to etch the mirrors. Output light is defected to a direction perpendicular to the wafer surface by a monolithically integrated 45° mirror.

Keywords

SEMICONDUCTOR LASER
ETCHED MIRRORS
ION MILLING
OUTPUT LIGHT DEFLECTION
INTEGRATED OPTICS
GAALAS-GAAS SURFACE EMITTING LASER

This publication has 1 reference indexed in Scilit:

HETEROSTRUCTURE MATERIALS
Published by Elsevier ,1978