High-efficiency waveguide InGaAs pin photodiode with bandwidth of over 40 GHz
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (5) , 473-474
- https://doi.org/10.1109/68.93883
Abstract
A waveguide pin photodiode structure was designed in consideration of both wide bandwidth and highly efficient coupling to the fiber. The device performed with a bandwidth higher than 40 GHz, and had high responsivity of 0.55 A/W (external quantum efficiency of 44%), showing superiority of bandwidth-efficiency product over the surface-illuminated photodiodes in the ultrahigh-frequency region. Based on the authors' calculations, coupling efficiency can be increased much more with an optimized layer structure.Keywords
This publication has 6 references indexed in Scilit:
- Design of InGaAs-InAlAs multiple-quantum-well (MQW) optical modulatorsIEEE Journal of Quantum Electronics, 1992
- Monolithic integration of 1.5 μm optical preamplifier and PIN photodetector with a gain of 20 dB and a bandwidth of 35 GHzElectronics Letters, 1990
- Butt coupled photodiodes integrated with Y-branched optical waveguides on InPElectronics Letters, 1989
- Wideband frequency-response measurement of optical receivers using optical heterodyne detectionJournal of Lightwave Technology, 1989
- Integrated directional couplers with photodetectors by hydride vapour phase epitaxyElectronics Letters, 1988
- High-speed zero-bias waveguide photodetectorsElectronics Letters, 1986