Photoreflectance study of Fermi level changes in photowashed GaAs
- 1 May 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (3) , 413-415
- https://doi.org/10.1116/1.585036
Abstract
As a result of the photowashing of (100) n‐GaAs (n≊3×1016 cm−3) a decrease of about 25% in the surface potential was found using the contactless electromodulation method of photoreflectance. This corresponds to a reduction in the surface state density by about a factor of 2.Keywords
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