Electrical properties of diamond surfaces
- 1 May 1996
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 5 (6-8) , 706-713
- https://doi.org/10.1016/0925-9635(95)00415-7
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- X-ray photoelectron spectroscopy analysis of plasma-treated surfaces of diamond filmsDiamond and Related Materials, 1995
- Electrical conduction in undoped diamond films prepared by chemical vapor depositionApplied Physics Letters, 1991
- Electrical properties of hydrogenated diamondApplied Physics Letters, 1990
- The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond filmIEEE Electron Device Letters, 1990
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Hydrogen passivation of electrically active defects in diamondApplied Physics Letters, 1989
- Resistivity of chemical vapor deposited diamond filmsApplied Physics Letters, 1989
- Diamond electronic devices-a critical appraisalSemiconductor Science and Technology, 1989
- Synthesis of diamonds by use of microwave plasma chemical-vapor deposition: Morphology and growth of diamond filmsPhysical Review B, 1988
- Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbideMaterials Science and Engineering: B, 1988