Mechanisms of Auger recombination in quantum wells

This publication has 19 references indexed in Scilit:

• Auger recombination in long-wavelength strained-layer quantum-well structures
  IEEE Journal of Quantum Electronics, 1995
• Nonthreshold Auger recombination in quantum wells
  Physical Review B, 1994
• Analytic model for the valence-band structure of a strained quantum well
  Physical Review B, 1994
• Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers
  Applied Physics Letters, 1993
• Temperature sensitivity of Auger-recombination effects in compressively strained ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As/${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$${\mathrm{As}}_{1\mathrm{-}\mathit{y}}$${\mathrm{P}}_{\mathit{y}}$ quantum-well lasers
  Physical Review B, 1993
• Analytical formalism for determining quantum-wire and quantum-dot band structure in the multiband envelope-function approximation
  Physical Review B, 1990
• A detailed study of Auger recombination in 1.3 m InGaAsP/InP quantum wells and quantum well wires
  Semiconductor Science and Technology, 1990
• Resonant interband tunnel diodes
  Applied Physics Letters, 1989
• Green's-function formalism of band-to-band Auger recombination in semiconductors. Correlation effect
  Physical Review B, 1982
• Auger effect in semiconductors
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959