18% efficient intrinsically passivated laser-processed silicon solar cells
- 12 January 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (2) , 107-109
- https://doi.org/10.1063/1.97868
Abstract
It is demonstrated that single-crystal silicon solar cells with efficiencies greater than 18% AM1.5 can be fabricated by glow discharge implantation and pulsed excimer laser annealing. A unique characteristic of these cells is that the surfaces are passivated intrinsically to give open circuit voltages as high as 640 mV without high-temperature oxidation. The simplicity of the processing is emphasized and the prospects for raising the efficiencies to even higher values are discussed.Keywords
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