In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs

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Abstract
The in-depth profiles of two kinds of Cr-related deep luminescence centers, Cr-VAs and Cr-Te, in Cr-diffused GaAs crystals were determined from luminescence measurements at 4.2 K. The Cr-VAs center gave a steeper in-depth profile than the Cr-Te center. Analysis of these in-depth profiles of the Cr-VAs and Cr-Te centers has enabled us to estimate the diffusion coefficient of the Cr impurity and the arsenic vacancy VAs in GaAs crystals. The values obtained are 2 ∼4 ×10-11 cm2/s for Cr and 5 ∼8 ×10-12 cm2/s for VAs, comparable to previously-reported data. A steep decrease in the luminescence intensities of the Cr-related lines at the surface of the samples was also observed, suggesting the existence of residual strain.