Characterization of Polishing‐Related Surface Damage in (0001) Silicon Carbide Substrates

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Abstract
The nature and extent of surface damage in substrates prepared by mechanical polishing have been studied using backscattering of ultraviolet light and cross‐sectional transmission electron microscopy. When the basal plane surface is prepared by lapping or polishing with large size diamond abrasives, the surface roughness is about one‐fifth the particle size, while the subsurface damage extends to a depth of about half the abrasive size. Under optimum conditions of particle size, vertical load, and relative rotation speed, the extent of subsurface damage can be minimized resulting in a nominally defect‐free specular surface exhibiting a uniform strained layer of less than 8 nm.

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