Multilevel monolithic inductors in silicon technology
- 2 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (5) , 359-360
- https://doi.org/10.1049/el:19950241
Abstract
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4 GHz and above 6 at 900 MHz for a 2 nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps.Keywords
This publication has 4 references indexed in Scilit:
- High Q inductors for wireless applications in a complementary silicon bipolar processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifierIEEE Electron Device Letters, 1993
- A package analysis tool based on a method of moments surface formulationIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1993
- Si IC-compatible inductors and LC passive filtersIEEE Journal of Solid-State Circuits, 1990