Interface states and Schottky barrier formation at metal/GaAs junctions

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Abstract
We report results of x-ray photoemission and cathodoluminescence spectroscopies studies of interface formation at metal–GaAs junctions. The results are interpreted by using a microscopic model of metal–semiconductor interfaces. Our low-temperature measurements and analyses show the validity of Schottky’s phenomenological description, thereby suggesting that metal-induced gap states and native defect mechanisms are not major factors in determining the Fermi-level energy at the low-temperature formed interface. Our room-temperature results show that a broad range of Fermi-level stabilization and the formation of two reaction-induced interface states are obtained upon metallization of GaAs(100) surfaces. These results strongly imply that the insensitivity of rectifying barrier height on metal work function results from metallization-induced atomic relaxations at the interface.

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