Low-temperature reactive ion etching and microwave plasma etching of silicon
- 22 February 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (8) , 616-618
- https://doi.org/10.1063/1.99382
Abstract
A new low‐temperature reactive ion etching and microwave plasma etching method is described. Highly anisotropic silicon etching with extremely small width shifts has been performed with high selectivities of 30 for organic resist films. High etch rates of 500 and 1000 nm/min by reactive ion etching and microwave plasma etching, respectively, were achieved with a SF6 gas plasma at low wafer temperatures from −130 to −100 °C. It is concluded that lower temperatures during plasma treatment yield lower side etching and increase the dry etch resistance of organic masks.Keywords
This publication has 3 references indexed in Scilit:
- Formation of deep holes in silicon by reactive ion etchingJournal of Vacuum Science & Technology B, 1987
- Low-temperature ion beam enhanced etching of tungsten films with xenon difluorideApplied Physics Letters, 1986
- Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etchingJournal of Vacuum Science & Technology B, 1986