Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response
- 1 May 2006
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 24 (3) , 783-786
- https://doi.org/10.1116/1.2167975
Abstract
We describe the fabrication and characterization of silicon-on-insulator, p+-i-n+ waveguide photodetectors with enhanced sensitivity to wavelengths around 1550nm. Increased sensitivity to sub-band-gap light results from the deliberate introduction of mid-band-gap defects via 1.5MeV silicon-ion implantation to a dose of 1×1012cm−2. For a waveguide of length of 6mm, an on-chip signal of 3.5dBm generates a photocurrent of 5μA while the defect-induced excess optical absorption is 8dB. Postimplantation annealing at a temperature of 300°C for 10min increases the photocurrent to 19μA, corresponding to a responsivity of 9mA∕W, while reducing the excess loss to 2dB. The devices described here are completely compatible with standard silicon processing and can be integrated easily with other photonic and electronic functionalities on the same silicon substrate.Keywords
This publication has 10 references indexed in Scilit:
- Fabrication of large area two- and three-dimensional polymer photonic crystals using single refracting prism holographic lithographyApplied Physics Letters, 2005
- A continuous-wave Raman silicon laserNature, 2005
- Infra-Red Photo-Detectors Monolithically Integrated with Silicon-Based Photonic CircuitsMRS Proceedings, 2005
- A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitorNature, 2004
- Towards the First Silicon LaserPublished by Springer Nature ,2003
- Design and performance of an erbium-doped silicon waveguide detector operating at 1.5 μmJournal of Lightwave Technology, 2002
- Simple expression for vacancy concentrations at half ion range following MeV ion implantation of siliconApplied Physics Letters, 2002
- Efficient high-speed near-infrared Ge photodetectors integrated on Si substratesApplied Physics Letters, 2000
- DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATIONApplied Physics Letters, 1969
- Infrared Absorption and Photoconductivity in Irradiated SiliconJournal of Applied Physics, 1959