Spin Accumulation and Dissipationless Spin Current in Hole-doped Semiconductors

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  • 14 January 2004
Abstract
Interplay of nonequilibrium spin accumulation and dissipationless spin current in the intrinsic spin Hall effect in hole-doped semiconductors was studied theoretically. It was shown that the nonequilibrium spin accumulation induced by the spin current flow in a sample of hole-doped semiconductors is determined by the gradients of the band-dependent shifts of the Fermi level and, in contrast, the change of spin current due to the occurrence of non-equilibrium spin accumulation depends only on the band-dependent shifts of the Fermi level. It was predicted that the intrinsic spin Hall effect could be detected through the measurement of the nonequilibrium spin accumulation.

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