On the dielectric properties of semiconducting materials as obtained from impedance measurements on Schottky barriers
- 14 May 1983
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 16 (5) , 879-888
- https://doi.org/10.1088/0022-3727/16/5/019
Abstract
Dielectric properties of several semiconducting materials were studied by impedance measurements of metal/semiconductor and electrolyte/semiconductor Schottky barriers. Power laws of the frequency were observed analogous to those reported for insulating materials. Also the relationship between the tangent of the loss angle and the bandgap of the semiconductor appeared to be similar to that observed on insulators. The results indicate that the residual frequency dispersion of the Schottky-barrier capacitance, persisting after careful pretreatment of the semiconductor surface, can be ascribed to the dielectric properties of the space-charge layer.Keywords
This publication has 10 references indexed in Scilit:
- Investigation of interface states in MIS-type Al-, Au- and Sn-GaAs Schottky barriers with a thin interfacial oxide layerJournal of Physics D: Applied Physics, 1981
- Interfacial Phenomena of TiO2‐PhotoanodesBerichte der Bunsengesellschaft für physikalische Chemie, 1981
- On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plotJournal of Physics D: Applied Physics, 1978
- Analysis of the alternating current properties of ionic conductorsJournal of Materials Science, 1978
- The Interpretation of Non-Ideal Dielectric Admittance and Impedance DiagramsPhysica Status Solidi (a), 1975
- Investigation on the frequency‐dependence of the impedance of the nearly ideally polarizable semiconductor electrodes CdSe, CdS and TiO2Berichte der Bunsengesellschaft für physikalische Chemie, 1975
- Physical basis of dielectric lossNature, 1975
- A.c. conduction in amorphous filmsThin Solid Films, 1968
- Selection of thin film capacitor dielectricsThin Solid Films, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967