Effect of linear emitter recombination on OCVD determination of lifetime in p-i-n diodes
- 1 August 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (8) , 693-697
- https://doi.org/10.1016/0038-1101(82)90196-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The effect of surface recombination on pin diodesSolid-State Electronics, 1981
- Recombination in the end regions of pin diodesSolid-State Electronics, 1979
- Spatial composition and injection dependence of recombination in silicon power device structuresIEEE Transactions on Electron Devices, 1979
- Die rekombination in thyristoren und gleichrichtern aus silizium: Ihr einfluss auf die durchlasskennlinie und das freiwerdezeitverhaltenSolid-State Electronics, 1975
- Determination of the bulk carrier lifetime in the low-doped region of a silicon power diode, by the method of open circuit voltage decay†International Journal of Electronics, 1973
- A two-dimensional numerical analysis of a silicon N-P-N transistorIEEE Transactions on Electron Devices, 1973
- Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—IISolid-State Electronics, 1972