Low-voltage, high-saturation, optically bistable self-electro-optic effect devices using extremely shallow quantum wells
- 26 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1049-1051
- https://doi.org/10.1063/1.106341
Abstract
Symmetric self-electro-optic effect devices (S-SEEDs) using extremely shallow GaAs/Al0.04Ga0.96As multiple quantum wells are demonstrated. By exploiting mainly exciton ionization, rather than the usual quantum-confined Stark shift, room-temperature optical bistability is obtained with no applied bias. The extremely shallow symmetric-SEED (symmetric E-SEED) exhibits contrast ratios (CRs)≂3.5, with biasses<5 V, demonstrating system applicability and compatability with electronics. Large system tolerances Δλ≂6 nm and maximum bistability loop width ≂70% are also obtained. Moreover, due to fast carrier escape times, the symmetric E-SEED exhibits useful CRs≳2 even at continuous-wave intensities ≳70 μW/μm2.Keywords
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