Ellipsometric analysis of amorphous oxide film growth and crystalline oxide island development during thermal oxidation of aluminum
- 1 November 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 13 (2) , 329-333
- https://doi.org/10.1016/0040-6090(72)90302-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Ellipsometry in the sub-monolayer regionSurface Science, 1969
- The Kinetics and Mechanism of Oxidation of Superpurity Aluminum in Dry OxygenJournal of the Electrochemical Society, 1966
- Measurement of the thickness and refractive index of very thin films and the optical properties of surfaces by ellipsometryJournal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1963
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962
- The investigation of thin surface films on metals by means of reflected polarized lightTransactions of the Faraday Society, 1933