Atomic-step observation at buried interfaces by scanning reflection electron microscopy
- 10 August 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 385 (2-3) , L952-L957
- https://doi.org/10.1016/s0039-6028(97)00347-6
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Nanostructure fabrication using the selective thermal desorption of SiO2 induced by electron beamsApplied Physics Letters, 1996
- Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristicsJournal of Applied Physics, 1996
- Scanning Tunneling Microscopy study of Oxide Nucleation and Oxidation-Induced Roughening at Elevated Temperatures on the Si(001)-(2 × 1) SurfacePhysical Review Letters, 1994
- Scanning-tunneling-microscopy observation of thermal oxide growth on Si(111)7×7 surfacesPhysical Review B, 1993
- Dynamic observations of interface propagation during silicon oxidationPhysical Review Letters, 1992
- Atom-resolved surface chemistry: The early steps of Si(111)-7×7 oxidationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Observation of interfacial atomic steps during silicon oxidationNature, 1989
- Surface roughness at the Si(100)-interfacePhysical Review B, 1985
- The Si–SiO2 interface: Correlation of atomic structure and electrical propertiesJournal of Vacuum Science & Technology A, 1984
- A high-resolution electron microscopy study of the Si-SiO2 interfaceApplied Physics Letters, 1978