Four-terminal field-effect transistors
- 1 May 1965
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 12 (5) , 246-247
- https://doi.org/10.1109/t-ed.1965.15488
Abstract
A derivation is presented for the transconductances of a four-terminal transistor of arbitrary channel doping profile. The derivation takes into account finite barrier potential and is specifically applied to the symmetrical, abrupt-junction, four-terminal, field-effect transistor. Curves are presented showing variations of normalized transconductance with applied gate-source EMF.Keywords
This publication has 2 references indexed in Scilit:
- Low-frequency operation of four-terminal field-effect transistorsIEEE Transactions on Electron Devices, 1964
- Analysis of field effect transistors with arbitrary charge distributionIEEE Transactions on Electron Devices, 1963