Quantum-well-doped FET (QUD-FET)

6 November 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (23) , 1240-1241
https://doi.org/10.1049/el:19860850

Abstract

A novel FET using a 2DEG is presented. The FET has an AlAs/GaAs/AlAs single quantum well with planar doping in the centre of the GaAs layer. The conduction channels are composed of a 2DEG generated in undoped GaAs layers outside the well. The measured 2DEG concentration was 1.8–2 × 10¹²cm⁻² with electron mobilities of 3500cm²/Vs at RT and 10500cm²/Vs at 77K. A 1.5μm-gate-length FET exhibits a maximum transconductance of 174 mS/mm and a maximum current exceeding 300 mA/mm at 77K.

Keywords

CONDUCTION CHANNELS
1.5 MICRON
300 MA
2DEG CONCENTRATION
2DEG FET
174 MS
ALAS-GAAS-ALAS SINGLE QUANTUM WELL
PLANAR DOPING
ELECTRON MOBILITIES
QUANTUM WELL DOPED FET

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