SHALLOW DOPING PROFILES FOR HIGH-SPEED BIPOLAR TRANSISTORS

Publisher Website
Google Scholar
Abstract
Within the framework of a double polysilicon self-aligned bipolar technology shallow base widths WB for npn transistors were obtained by low-energy implantation of boron into either crystalline Si (WB = 150 nm), preamorphized Si (WB = 125 nm) or by diffusing boron out of polysilicon (WB= 85 nm). Rapid thermal processing was used for the emitter drive-in. A transit frequency of 22 GHz was achieved for WB = 85 nm. Comparison with one-dimensional calculations indicates the potential of further enhancement of intrinsic device speed by optimization of the proposed technological approaches

This publication has 0 references indexed in Scilit: