Simulated magnetoresistive behavior of geometrically asymmetric spin valves
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 32 (5) , 4606-4608
- https://doi.org/10.1109/20.539093
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Simulating device size effects on magnetization pinning mechanisms in spin valvesJournal of Applied Physics, 1996
- Magnetoresistance of thin-film NiFe devices exhibiting single-domain behaviorIEEE Transactions on Magnetics, 1995
- Giant magnetoresistive in soft ferromagnetic multilayersPhysical Review B, 1991